| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming method of a conductive zinc film capable of depositing a conductive zinc film having high temporal stability at low cost. <P>SOLUTION: A film forming method of a conductive zinc film introduces a gas containing a group-III-element-containing organic compound containing alkylzinc (Zn(C<SB POS="POST">n</SB>H<SB POS="POST">2n+1</SB>)<SB POS="POST">2</SB>, n is an integer) and a group III element for a dopant, water, and hydrogen into a film forming chamber 2, and deposits a conductive zinc film in the film forming chamber 2 under a condition in which the temperature of a substrate 10 is less than 400°C when the conductive zinc film is deposited on the substrate 10 disposed in the film forming chamber 2 by using organic metal chemical vapor deposition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
