SEMICONDUCTOR SUBSTRATE HOLDING TRAY, SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate containing a single crystal semiconductor layer of large area by efficiently implanting ion into a plurality of insulating layer covering single crystal semiconductor substrates.

SOLUTION: During a manufacturing step of a semiconductor substrate, a plurality of single crystal semiconductor substrates in which an insulating layer is formed on its surface are laminated with a holding tray in which a Van der Waals force on its surface is adjusted. A fragile layer is formed in a predetermined depth of the plurality of single crystal semiconductor substrates by ion irradiation process to the plurality of single crystal semiconductor substrates. A base substrate in which a Van der Waals force is adjusted is laminated with the plurality of single crystal semiconductor substrates. A difference in Van der Waals forces is used to selectively separate the holding tray. A peeling and heating treatment is performed to form a cleavage surface, and the single crystal semiconductor substrate is separated from the base substrate, so that the single crystal semiconductor substrate is transferred onto the base substrate through the insulating layer.

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