| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for depositing a film onto a substrate. <P>SOLUTION: The substrate (35) is contained within a reactor vessel (1) at a pressure of from about 0.1 millitorr to about 100 millitorr. This method includes applying, to the substrate, a reaction cycle including: (i) supplying a gas precursor containing at least one organo-metallic compound to the reactor vessel at a temperature of from about 20°C to about 150°C and a vapor pressure of from about 0.1 torr to about 100 torr; and (ii) supplying a purge gas, an oxidizing gas, or a combination thereof to the reactor vessel. <P>COPYRIGHT: (C)2012,JPO&INPIT |
