METHODS FOR PREPARING THIN FILLMS BY ATOMIC LAYER DEPOSITION USING HYDRAZINES
摘要
<p>A method of forming a metal-containing film by atomic layer deposition is provided herein. The method comprises using (a) at least one metal fluorinated ß-diketonate precursor; and (b) a co-reagent comprising at least one optionally-substituted hydrazine.</p>
申请公布号
WO2011115878(A4)
申请公布日期
2011.12.08
申请号
WO2011US28292
申请日期
2011.03.14
申请人
SIGMA-ALDRICH CO. LLC;WILLIAMS, PAUL;RUSHWORTH, SIMON
