| 发明名称 |
AMORPHOUS OXIDE AND ELECTRIC FIELD EFFECT TRANSISTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel amorphous oxide which can be applied to an active layer and the like of a TFT. <P>SOLUTION: An amorphous oxide comprises a thin film composition of which varies in a layer thickness direction, and electron carrier concentration is less than 10<SP POS="POST">18</SP>/cm<SP POS="POST">3</SP>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011249823(A) |
申请公布日期 |
2011.12.08 |
| 申请号 |
JP20110156723 |
申请日期 |
2011.07.15 |
| 申请人 |
CANON INC;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
NAKAGAWA KATSUMI;SANO MASAFUMI;HOSONO HIDEO;KAMIYA TOSHIO;NOMURA KENJI |
| 分类号 |
H01L29/786;H01L21/336;H01L21/363 |
主分类号 |
H01L29/786 |
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