| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film formation method of amorphous silicon, by which precision of surface roughness can be further improved and progresses of miniaturization of contact holes, lines, or the like can be handled. <P>SOLUTION: The film formation method of amorphous silicon includes the steps of: forming a seed layer 3 on a surface of a substrate 2 by heating the substrate 2 and flowing aminosilane-based gas onto the heated substrate 2; and forming an amorphous silicon film on the seed layer 3 by heating the substrate 2, supplying silane-based gas containing no amino group onto the seed layer 3 on the surface of the heated substrate 2, and thermally decomposing the silane-based gas containing no amino group. <P>COPYRIGHT: (C)2012,JPO&INPIT |
