| 摘要 |
<P>PROBLEM TO BE SOLVED: To downsize an HEMT element used as a switching element in a high frequency module. <P>SOLUTION: In an active region defined by an element isolation portion 9 on a principal plane of a substrate 1 made of GaAs, by patterning so that a gate electrode 17 is formed as one line, extends between a source electrode 13 and a drain electrode 14 in a vertical direction in the figure, and extends in the other part in a lateral direction, a proportion of the gate electrode 17 disposed outside the active region is reduced, and an area of a gate pad 17A is reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
