发明名称 |
METHOD FOR DIVIDING A SEMICONDUCTOR FILM FORMED ON A SUBSTRATE INTO PLURAL REGIONS BY MULTIPLE LASER BEAM IRRADIATION |
摘要 |
The present invention relates to a method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed. Said final laser beam treatment is applied to actually remove material in order to form a groove. Further, the invention relates to an arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Said arrangement comprises a first conditioning laser for the treatments of said sequence of at least two laser beam treatments except of a final laser beam treatment and it comprises a second laser for said final laser beam treatment.
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申请公布号 |
US2011300692(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US200913126487 |
申请日期 |
2009.10.20 |
申请人 |
GUENSTER JENS;SINICCO IVAN;OERLIKON SOLAR AG, TRUBBACH |
发明人 |
GUENSTER JENS;SINICCO IVAN |
分类号 |
H01L21/268;B29C35/08 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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