发明名称 |
NON-VOLATILE MEMORY PROGRAMMING |
摘要 |
Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method includes applying different voltages to data lines associated with different memory cells based on threshold voltages of the memory cells in an erased state. Other embodiments including additional memory devices and methods are described.
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申请公布号 |
US2011299333(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US20100795202 |
申请日期 |
2010.06.07 |
申请人 |
MOSCHIANO VIOLANTE;SANTIN GIOVANNI |
发明人 |
MOSCHIANO VIOLANTE;SANTIN GIOVANNI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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