THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a TFT (20) comprising a gate electrode (21), a gate insulation film (22), a semiconductor layer (23), a source electrode (24), and a drain electrode (25). The semiconductor layer (23) comprises a metal-oxide semiconductor (IGZO) and has a source area (23a) in contact with the source electrode (24), a drain area (23b) in contact with the drain electrode (25), and a channel area (23c) between said source area (23a) and drain area (23b). In the semiconductor layer (23), at least the channel area (23c) is has a reduced zone (30) with a content ratio of an elemental metal, such as In, higher than that in other areas.