发明名称 SEMICONDUCTOR SWITCH CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor switch circuit without degradation of linearity in low frequency band. <P>SOLUTION: A semiconductor switch circuit comprises one or two or more field effect transistor(s) in which a source and a drain are connected between input and output terminals in series, and resistors connected to the gates of the field effect transistors. In the circuit, capacitors can be connected between the gate and the drain and between the gate and the source of the field effect transistors. The connection of the capacitors between the gate and the drain and between the gate and the source of the field effect transistors adequately lowers the impedance of the field effect transistors compared to the resistor connected to the gate electrode in lower frequency band than before, thereby the linearity is improved. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011249902(A) 申请公布日期 2011.12.08
申请号 JP20100118111 申请日期 2010.05.24
申请人 NEW JAPAN RADIO CO LTD 发明人 KURIHARA DAISUKE
分类号 H03K17/693;H03K17/06;H03K17/10;H03K17/687 主分类号 H03K17/693
代理机构 代理人
主权项
地址