| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device suitable for bipolar operation. <P>SOLUTION: A semiconductor memory device related to an embodiment comprises: a word line wiring layer including multiple word lines extending in a first direction; a bit line wiring layer including multiple bit lines extending in a second direction intersecting with the first direction; and a pillar arranged between each of the word lines and each of the bit lines. The pillar has a selector laminated film containing silicon over the whole film and a variable resistance film arranged on the word line side or the bit line side when viewed from the selector laminated film. On the selector laminated film, a heterogeneous component containing layer composed of 14-group elements having a larger atomic radius than that of silicon is formed in a part of the region except the ends of the word line side and the bit line side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
