发明名称 |
Semiconductor Device and Method of Forming Shielding Layer After Encapsulation and Grounded Through Interconnect Structure |
摘要 |
A method of manufacturing a semiconductor device includes providing a substrate having a conductive bump formed over the substrate and a semiconductor die with an active surface oriented to the substrate. An encapsulant is deposited over the semiconductor die and the conductive bump, and the encapsulant is planarized to expose a back surface of the semiconductor die opposite the active surface while leaving the encapsulant covering the conductive bump. A channel is formed into the encapsulant to expose the conductive bump. The channel extends vertically from a surface of the encapsulant down through the encapsulant and into a portion of the conductive bump. The channel extends through the encapsulant horizontally along a length of the semiconductor die. A shielding layer is formed over the encapsulant and the back surface of the semiconductor die. The shielding layer includes a docking pin extending into the channel and into the portion of the conductive bump to electrically connect to the conductive bump and provide isolation from inter-device interference.
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申请公布号 |
US2011298105(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113209620 |
申请日期 |
2011.08.15 |
申请人 |
CHI HEEJO;CHO NAMJU;SHIN HANGIL;STATS CHIPPAC, LTD. |
发明人 |
CHI HEEJO;CHO NAMJU;SHIN HANGIL |
分类号 |
H01L21/56;H01L23/552 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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