| 发明名称 |
MEMORY DEVICE COMPRISING A JUNCTIONLESS THIN- FILM TRANSISTOR |
| 摘要 |
A non-volatile memory device (200) includes at least one junctionless transistor and a storage region. The junctionless transistor is a TFT and includes a junctionless, heavily doped semiconductor channel (204) having two dimensions less that 100 nm. The memory device can be a NAND flash memory or a resistance - switching memory. The memory cells can be integrated in three dimensions. |
| 申请公布号 |
WO2011152938(A1) |
申请公布日期 |
2011.12.08 |
| 申请号 |
WO2011US34517 |
申请日期 |
2011.04.29 |
| 申请人 |
SANDISK TECHNOLOGIES INC.;SAMACHISA, GEORGE;ALSMEIER, JOHANN;MIHNEA, ANDREI |
发明人 |
SAMACHISA, GEORGE;ALSMEIER, JOHANN;MIHNEA, ANDREI |
| 分类号 |
H01L21/336;B82Y10/00;G11C16/04;H01L21/77;H01L21/8246;H01L21/8247;H01L21/84;H01L27/06;H01L27/112;H01L27/115;H01L27/12;H01L27/24;H01L29/06;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
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