| 摘要 |
The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 700� C. to 775� C. is performed. In step (B), the growth rate of the m-plane InGaN layer is set in a range from 4.5 nm/min to 10 nm/min. |
