发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
申请公布号 US2011300690(A1) 申请公布日期 2011.12.08
申请号 US201113187754 申请日期 2011.07.21
申请人 SHIMOMURA AKIHISA;MIZOI TATSUYA;MIYAIRI HIDEKAZU;TANAKA KOICHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SHIMOMURA AKIHISA;MIZOI TATSUYA;MIYAIRI HIDEKAZU;TANAKA KOICHIRO
分类号 H01L21/30 主分类号 H01L21/30
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