发明名称 |
METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY SUBSTRATE |
摘要 |
A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented. |
申请公布号 |
US2011297931(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113210282 |
申请日期 |
2011.08.15 |
申请人 |
YANG DONG-JU;JEONG YU-GWANG;LEE KI-YEUP;KIM SANG-GAB;YEO YUN-JONG;CHOI SHIN-IL;CHIN HONG-KEE;CHOI SEUNG-HA;BANG JUNG-SUK |
发明人 |
YANG DONG-JU;JEONG YU-GWANG;LEE KI-YEUP;KIM SANG-GAB;YEO YUN-JONG;CHOI SHIN-IL;CHIN HONG-KEE;CHOI SEUNG-HA;BANG JUNG-SUK |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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地址 |
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