CROSS-POINT VARIABLE-RESISTANCE NONVOLATILE STORAGE DEVICE

摘要

Provided is a multilayer cross-point variable-resistance nonvolatile storage device made up of memory cells that are formed in the same direction such that the characteristics in each layer become stable. The memory cells (51) are formed in the positions of intersection between bit lines (53) arranged in the X direction and word lines (52) arranged in the Y direction, the bit lines and the word lines being formed in multiple layers. In a multilayer cross-point structure in which a plurality of vertical array planes that are provided for the respective groups of bit lines aligned in the Z direction and that share the word lines are lined up in the Y direction, the switching of electrical connection/disconnection between the even-numbered-layer bit lines, which are commonly connected, and a global bit line (56) is controlled by an even-numbered-layer bit-line selection switch element (57), and the switching of electrical connection/disconnection between the odd-numbered-layer bit lines, which are commonly connected, and the global bit line is controlled by an odd-numbered-layer bit-line selection switch element (58). A bidirectional current-limiting circuit (920) made by connecting a P-type current-limiting element (91) and an N-type current-limiting element (90) in parallel is provided between the even-numbered-layer bit-line selection switch element (57) and the odd-numbered-layer bit-line selection switch element (58), and the global bit line (56).