| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide manufacturing method of a semiconductor device for solving a problem that an alignment mark, which is necessary for alignment with a super junction structure in the following process step, is conventionally formed in a process step before forming the super junction structure by engraving a semiconductor substrate to form a recess and the recess is used as the alignment mark, and in the following process step of forming the super junction structure, the alignment mark is coated with an insulation film such as a silicon oxide film as to prevent the alignment mark from being damaged, but injury sometimes penetrates the oxide coating film and reaches a silicon substrate and thereby destroys the alignment mark. <P>SOLUTION: The manufacturing method of a semiconductor device having a super junction structure comprises the step, after forming the super junction structure, of forming an alignment mark for alignment with the super junction structure in the following process step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
