| 摘要 |
A semiconductor device and a method of manufacturing the same are disclosed. By forming a boron nitride film as a sealing film of a buried gate of a cell region from being oxidized, it is possible to improve refresh characteristics, to reduce the number of processes, and to reduce parasitic capacitance so as to improve the characteristics of the device. The semiconductor device includes a recess included in a semiconductor substrate, a gate buried over a bottom of the recess, and a boron nitride film included over the semiconductor substrate including the gate and the recess. |
