GLASS SUBSTRATE FOR SEMICONDUCTOR DEVICE MEMBER, AND PROCESS FOR PRODUCING GLASS SUBSTRATE FOR SEMICONDUCTOR DEVICE MEMBER

摘要

It is an object of the present invention to provide a glass substrate having plural through-holes which is not likely to peel from a silicon wafer, even though laminated on and jointed to a the silicon wafer and then subjected to heat treatment. The above object is accomplished by a glass substrate having an average thermal expansion coefficient of from 10×10 -7 to 50×10 -7 /K within a range of from 50°C to 300°C, having plural through-holes with a taper angle of from 0.1 to 20° and having a thickness of from 0.01 to 5 mm.