发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device manufacturing method is provided to arrange a dummy pattern appropriate to the shape of a through-silicon via, thereby stably arranging the through-silicon via in a state in which multiple chips are laminated. CONSTITUTION: A first region is defined in order to arrange a through-silicon via penetrating a semiconductor chip. A second region is defined in order to actually arrange the through-silicon via within the first region. A dummy pattern(32) is arranged in a region excluding a third region(A1) among the first region. The dummy pattern(31) is arranged also in the inside of a fourth region(A2). The dummy pattern for wafer open adjustment is arranged based on a separated region with fixed intervals(d1,d2).
申请公布号 KR20110131672(A) 申请公布日期 2011.12.07
申请号 KR20100051233 申请日期 2010.05.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, YOUNG HEE;RYU, NAM GYU
分类号 H01L23/48;H01L23/12 主分类号 H01L23/48
代理机构 代理人
主权项
地址