发明名称 |
METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURE SYSTEM, AND METHOD FOR UTILIZING PHOTOELECTRIC CONVERSION DEVICE MANUFACTURE SYSTEM |
摘要 |
<p>A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device (10) in which a first photoelectric conversion unit (3) and a second photoelectric conversion unit (4) are sequentially stacked on a transparent-electroconductive film (2) formed on a substrate (1). The method includes: forming each of a first p-type semiconductor layer (31), a first i-type semiconductor layer (32), a first n-type semiconductor layer (33), and a second p-type semiconductor layer (41) in a plurality of first plasma CVD reaction chambers (62, 63, 64, 65); exposing the second p-type semiconductor layer (41) to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber (72) before forming of the second i-type semiconductor layer (42); forming the second i-type semiconductor layer (42) on the second p-type semiconductor layer (41) that was exposed to an air atmosphere, in the second plasma CVD reaction chamber (72); and forming the second n-type semiconductor layer (43) on the second i-type semiconductor layer (42).</p> |
申请公布号 |
EP2393119(A1) |
申请公布日期 |
2011.12.07 |
申请号 |
EP20100735670 |
申请日期 |
2010.01.29 |
申请人 |
ULVAC, INC. |
发明人 |
UCHIDA, HIROTO;FUJINAGA, TETSUSHI;WAKAI, MASAFUMI;KOBAYASHI, TADAMASA;UE, YOSHINOBU;NAKAMURA, KYUZO;ASARI, SHIN;SAITO, KAZUYA;MATSUMOTO, KOICHI;SHIMIZU, YASUO;MORI, KATSUHIKO |
分类号 |
H01L31/04;H01L31/076 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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