| 摘要 |
PURPOSE: A photo-resist composition and a method for forming a photo-lithographic pattern are provided to overcome defects generated from a photo-lithographic process and to improve the operational windows of the photo-lithographic process. CONSTITUTION: A photo-resist composition includes first polymer, second polymer, a photo-acid generator, and a solvent. The first polymer is acid-sensitive. The second polymer is formed based on a monomer represented by chemical formula I. The second polymer is acid-insensitive, and no fluorine and silicon are contained in the second polymer. The surface energy of the second polymer is lower than that of the first polymer. In the chemical formula I, the P is a polymerizable functional group. The Z is a spacer unit which is selected from arbitrarily substituted linear or branched aliphatic and aromatic hydrocarbon and the combination of the same. The n is the integer of 0-5. The R is selected from substituted and non-substituted C1 to C20 linear, branched, and cyclic hydrocarbons. |
