Manufacturing Method for Real Time Gamma-ray/Thermal Neutron Detector Coupled pMOSFET and pMOSFET Deposited Gadolinium,申请号KR20090066051-传众专利搜索

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发明名称	Manufacturing Method for Real Time Gamma-ray/Thermal Neutron Detector Coupled pMOSFET and pMOSFET Deposited Gadolinium
摘要
申请公布号	KR101090083(B1)	申请公布日期	2011.12.07
申请号	KR20090066051	申请日期	2009.07.20
申请人		发明人
分类号	G01T1/02;G01T3/00;H01L21/02	主分类号	G01T1/02
代理机构		代理人
主权项
地址

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