Compact field-effect transistor with counter-electrode and manufacturing method

摘要

The method involves etching a grid material from an etch resist for defining a gate electrode (9) and a contact zone of a counter electrode of a support substrate (2). A part of the support substrate is released in the contact zone of the counter electrode, and a contact of the counter electrode is formed in the contact zone of the counter electrode. A protection layer (21) is formed, where the protection layer covers the semi-conductor layer. An independent claim is also included for a FET.