PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE
摘要
<p>Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.</p>
申请公布号
EP2392037(A1)
申请公布日期
2011.12.07
申请号
EP20100702390
申请日期
2010.02.01
申请人
SEAGATE TECHNOLOGY LLC
发明人
AMIN, NURUL;JIN, INSIK;TIAN, WEI;WIREBAUGH, ANDREW;VAITHYANATHAN, VENUGOPALAN;SUN, MING