| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to include a plurality of light emitting parts emitting light with different wavelengths in a single chip, thereby enabling the semiconductor light emitting device to emit white light without a phosphor. CONSTITUTION: A first light emitting structure(120) is arranged on a substrate(110). The first light emitting structure comprises a first n-type semiconductor layer(121), a first p-type semiconductor layer(123), and a first active layer(122). A second light emitting structure(130) is arranged on the first light emitting structure. The second light emitting structure comprises a second n-type semiconductor layer(131), a nano rod(131'), a second active layer(132), and a second p-type semiconductor layer(133). The second active layer is arranged in order to cover the upper surface and side surface of the nano rod.
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