| 摘要 |
PURPOSE: A fuse circuit of a semiconductor device is provided to stably operate a fuse programming by controlling sensing sensitivity. CONSTITUTION: A fuse stress voltage driving circuit(10) changes an electric connection state of a fuse by driving the fuse with a stress voltage. A first self boosting unit(11A) generates a first stress voltage with a higher voltage level than a power voltage by boosting the power voltage according to the control of a rupture enable signal and supplies the generated first stress voltage to one side of the fuse. A second self boosting unit(11B) generates a second stress voltage with a lower voltage level than the power voltage by boosting a ground voltage according to the control of the rupture enable signal and supplies the generated second stress voltage to the other side of the fuse.
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