发明名称 |
Patterning method using stacked structure |
摘要 |
A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the layer is provided. The stacked structure includes an underlayer, a silicon rich organic layer, and a photoresist layer. The underlayer is on the material layer. The silicon rich organic layer is between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than two times of the thickness of the silicon rich organic layer. The thickness of the underlayer is smaller than three times of the predetermined opening width. |
申请公布号 |
US8071487(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20060464496 |
申请日期 |
2006.08.15 |
申请人 |
WANG MENG-JUN;CHEN YI-HSING;LIAO JIUNN-HSIUNG;YANG MIN-CHIEH;WANG CHUAN-KAI;UNITED MICROELECTRONICS CORP. |
发明人 |
WANG MENG-JUN;CHEN YI-HSING;LIAO JIUNN-HSIUNG;YANG MIN-CHIEH;WANG CHUAN-KAI |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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