发明名称 |
Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device |
摘要 |
A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered. |
申请公布号 |
US8072714(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US201113046567 |
申请日期 |
2011.03.11 |
申请人 |
SATO MASASHIGE;UMEHARA SHINJIRO;IBUSUKI TAKAHIRO;FUJITSU LIMITED |
发明人 |
SATO MASASHIGE;UMEHARA SHINJIRO;IBUSUKI TAKAHIRO |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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