发明名称 NON-VOLATILE MEMORY DEVICE
摘要 PURPOSE: A non-volatile memory device is provided to secure stability in higher frequency by implementing the latching and transmitting data stably. CONSTITUTION: In a non-volatile memory device, a buffer part(410) receives data by being synchronized with a write enable signal. Data is inputted to a plurality of input pads. An even latch unit(420) stores buffed data in response to an even write enable signal. An odd latch unit(430) stores buffed data in response to an odd write enable signal. The data is buffered by the buffer unit. A transmission unit(440) transfers data stored in the even latch unit and the odd latch unit to a selected bank.
申请公布号 KR20110130792(A) 申请公布日期 2011.12.06
申请号 KR20100050293 申请日期 2010.05.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JUNG HWAN
分类号 G11C16/10;G11C16/06 主分类号 G11C16/10
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