NITRIDE LIGHT EMITTING DIODES WITH SACRIFICIAL LAYER

摘要

PURPOSE: A vertical type nitride system light emitting diode is provided to offer the vertical type nitride system light emitting diode of high efficiency and high power by minimizing the optical and structural deterioration phenomenon of a quantum well structure. CONSTITUTION: A buffer layer(22) is formed on the upper side of a substrate(21) in order to absorb a shock due to laser lift-off. A sacrificial layer(30) is formed on the upper side of the buffer layer. An n contact layer(23) is formed on the upper side of sacrificial layer. An active layer(24) is formed on the upper side of the n contact layer. The n contact layer emits light according to an electric signal which is applied in a light emitting diode. A p-GaN layer(25) is formed on the upper side of the active layer. Band-gap energy of the sacrificial layer is smaller than band-gap energy of the buffer layer.