发明名称 |
Method of ONO integration into MOS flow |
摘要 |
A method of ONO integration of a non-volatile memory device (e.g. EEPROM, floating gate FLASH and SONOS) into a baseline MOS device (e.g. MOSFET) is described. In an embodiment the bottom two ONO layers are formed prior to forming the channel implants into the MOS device, and the top ONO layer is formed simultaneously with the gate oxide of the MOS device. |
申请公布号 |
US8071453(B1) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090608886 |
申请日期 |
2009.10.29 |
申请人 |
RAMKUMAR KRISHNASWAMY;JIN BO;JENNE FREDRICK B.;CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
RAMKUMAR KRISHNASWAMY;JIN BO;JENNE FREDRICK B. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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