| 发明名称 |
Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same |
| 摘要 |
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer. |
| 申请公布号 |
US8072001(B2) |
申请公布日期 |
2011.12.06 |
| 申请号 |
US20100879205 |
申请日期 |
2010.09.10 |
| 申请人 |
OHBU ISAO;KUSANO CHUSHIRO;UMEMOTO YASUNARI;KUROKAWA ATSUSHI;RENESAS ELECTRONICS CORPORATION |
发明人 |
OHBU ISAO;KUSANO CHUSHIRO;UMEMOTO YASUNARI;KUROKAWA ATSUSHI |
| 分类号 |
H01L21/331;H01L29/73;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L27/082;H01L29/737;H01L29/861;H03F3/24 |
主分类号 |
H01L21/331 |
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