发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 <p>An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space</p>
申请公布号 KR20110131268(A) 申请公布日期 2011.12.06
申请号 KR20117023446 申请日期 2010.02.15
申请人 MITSUI ENGINEERING & SHIPBUILDING CO., LTD. 发明人 TACHIBANA HIROYUKI;MURATA KAZUTOSHI;MIYATAKE NAOMASA;MORI YASUNARI
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址