发明名称 Chemical vapor deposition method and system for semiconductor devices
摘要 A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.
申请公布号 US8071165(B2) 申请公布日期 2011.12.06
申请号 US20080188468 申请日期 2008.08.08
申请人 KAPUR VIJAY K.;KEMMERLE RICHARD T.;LE PHUCAN;INTERNATIONAL SOLAR ELECTRIC TECHNOLOGY, INC. 发明人 KAPUR VIJAY K.;KEMMERLE RICHARD T.;LE PHUCAN
分类号 C23C16/00 主分类号 C23C16/00
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