发明名称 Memory control circuit and memory control method
摘要 A memory control circuit includes a data sample circuit, a first delay control circuit, a second delay control circuit and a data circuit. The data sample circuit is used for generating a first data strobe signal and a second data strobe signal. The first delay control circuit is coupled to the data sample circuit, for receiving the first data strobe signal and delaying the first data strobe signal to generate a first delayed data strobe signal. The second delay control circuit is coupled to the data sample circuit, for receiving the second data strobe signal and delaying the second data strobe signal to generate a second delayed data strobe signal. The data circuit is coupled to the first delay control circuit and the second delay control circuit, for transferring data signals according to the first delayed data strobe signal and the second delayed data strobe signal.
申请公布号 US8072826(B2) 申请公布日期 2011.12.06
申请号 US20090629894 申请日期 2009.12.03
申请人 CHANG TIEH-YEN;HIMAX TECHNOLOGIES LIMITED 发明人 CHANG TIEH-YEN
分类号 G11C7/00 主分类号 G11C7/00
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