发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A first select transistor is connected to one end of a plurality of memory cell transistors that are serially connected. A second select transistor is connected to the other end of the serially connected memory cell transistors. A first impurity diffusion region is formed in a semiconductor substrate and constitutes a first main electrode of the first select transistor. A second impurity diffusion region is formed in the semiconductor substrate and constitutes a second main electrode of the second select transistor. A depth of the first impurity diffusion region is greater than a depth of the second impurity diffusion region. |
申请公布号 |
US8072020(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090412884 |
申请日期 |
2009.03.27 |
申请人 |
GOMIKAWA KENJI;KUTSUKAKE HIROYUKI;KATO YOSHIKO;NOGUCHI MITSUHIRO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
GOMIKAWA KENJI;KUTSUKAKE HIROYUKI;KATO YOSHIKO;NOGUCHI MITSUHIRO |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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