EPI substrate with low doped EPI layer and high doped Si substrate layer for media growth on EPI and low contact resistance to back-side substrate

摘要

The fabrication of seek-scan probe (SSP) memory devices involves processing on both-sides of a wafer. However, there are temperature restrictions on the mover circuitry side of the wafer and doping level constrains for either side of wafer. Using a low doped EPI layer on a highly doped substrate solves this issue and provides good STO growth.