| 摘要 |
PURPOSE: A manufacturing method of a phase change memory device is provided to arrange a lower electrode using a mask pattern, thereby improving electrical characteristic of the lower electrode. CONSTITUTION: A high concentration n-type impurity region(110) is arranged on a cell region of a semiconductor substrate(100). A first interlayer insulating film(120) is arranged on the upper part of the semiconductor substrate. A recess trench is arranged by etching the first interlayer insulating film. A Schottky diode pattern(135) is buried within the recess trench. A lower electrode material film(140a) and hard mask film(144a) are successively laminated on the upper part of the Schottky diode pattern.
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