发明名称 |
Multi-bit flash memory devices and methods of programming and erasing the same |
摘要 |
A non-volatile memory device includes an array of non-volatile memory cells configured to support single bit and multi-bit programming states. A control circuit is provided, which is configured to program a first page of non-volatile memory cells in the array as M-bit cells during a first programming operation and further configured to program the first page of non-volatile memory cells as N-bit cells during a second programming operation. The first and second programming operations are separated in time by at least one operation to erase the first page of non-volatile memory cells. M and N are unequal integers greater than zero. |
申请公布号 |
US8072804(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090471729 |
申请日期 |
2009.05.26 |
申请人 |
LEE SE-HOON;LEE CHOONG-HO;CHOI JUNG-DAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SE-HOON;LEE CHOONG-HO;CHOI JUNG-DAL |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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地址 |
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