发明名称 |
ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A manufacturing method of power storage is provided to increase discharge capacity, and capable of slimming and reducing weight. CONSTITUTION: A manufacturing method of power storage comprises: a step dispersing metal element on current collector(101); a step forming an active material layer(103) from a crystalline silicon layer(103a) including whiskers(113a,113b) by low pressure chemical vapor deposition using deposition gas, which includes silicon as a raw material on the surface of the capacitor; the low pressure chemical vapor deposition operates at the temperature higher than 580°C. The dispersion of the metal element operates by spreading a solution consisting of metal element more than 1000ppm. |
申请公布号 |
KR20110131095(A) |
申请公布日期 |
2011.12.06 |
申请号 |
KR20110047436 |
申请日期 |
2011.05.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
C23C16/06;H01G9/04;H01M4/1395;H01M4/66;H01M4/70;H01M4/74 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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