| 摘要 |
A solid-state image-sensing device has a MOS transistor (T1) connected to a photodiode PD (PD) and performing photoelectric conversion, and has, as an integrating circuit for amplifying and integrating the photoelectric current obtained by the photoelectric conversion, a MOS transistor T2 and a capacitor C. In the solid-state image-sensing device, integration operation is controlled by a MOS transistor T6 connected to the gate of the MOS transistor T2. |
