THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A three-dimensional semiconductor memory apparatus a manufacturing method thereof are provided to re-crystallize a part of a semiconductor pattern adjacent to laminated conductive patterns by directly projecting a laser, thereby improving charge mobility in the operation of the three-dimensional semiconductor memory apparatus. CONSTITUTION: A laminate structure comprises a plurality of conductive patterns(123,124). An active post(AP) is connected to a substrate by penetrating the laminate structure. The active post comprises a first semiconductor pattern(162) and a second semiconductor pattern(165). The first semiconductor pattern is arranged within a recess region(a) defined in the laminate structure. The second semiconductor pattern is arranged within a penetration region(b) defined in the laminate structure. A data storage pattern(150) is placed between the active post and conductive patterns.