发明名称 Charged particle beam apparatus
摘要 A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.
申请公布号 US8071961(B2) 申请公布日期 2011.12.06
申请号 US20070802452 申请日期 2007.05.23
申请人 MITO HIROAKI;SASADA KATSUHIRO;KATO KAZUO;KUDO TOMOHIRO;SAEKI TOMONORI;HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 MITO HIROAKI;SASADA KATSUHIRO;KATO KAZUO;KUDO TOMOHIRO;SAEKI TOMONORI
分类号 H01J37/18 主分类号 H01J37/18
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