发明名称 SLAVE WAFER FOR STACK PACKAGE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD OF STACK PACKAGE SEMICONDUCTOR MEMORY THEREOF
摘要 <p>PURPOSE: A slave wafer for stack package semiconductor memory and a manufacturing method of a stack package semiconductor memory thereof are provided to perform a level test of slave wafer by implementing a peripheral circuit test block in the scribe lane of the slave wafer. CONSTITUTION: In a slave wafer for stack package semiconductor memory and a manufacturing method of a stack package semiconductor memory thereof, a scribe lane(320) divides a plurality of dies(310). A plurality of dies comprises a memory cell block. A peripheral circuit test block for testing the operation of a plurality of dies in the scribe lane. The peripheral circuit test block is arranged in the scribe lane in a die group comprised of four dies(310A,310B,310C,310D). The die group is determined in consideration of the area of the peripheral circuit test block.</p>
申请公布号 KR20110130113(A) 申请公布日期 2011.12.05
申请号 KR20100049586 申请日期 2010.05.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, BYOUNG KWON
分类号 H01L23/12;H01L21/66 主分类号 H01L23/12
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