| 摘要 |
PURPOSE: A phase change memory device is provided to reduce delay due to temperature change according to a control signal reflecting temperature change. CONSTITUTION: In a phase change memory device, a cell array(230) comprises at least one unit cell. A current sensing part(140) senses data saved in the unit cell. A power source generating circuit(100) supplies a power supply voltage to the current sensing part. The power source generating circuit is activated while the current sensing part performs a sensing operation.
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