| 摘要 |
PURPOSE: A nonvolatile memory device is provided to improve the reliability of an operation by preventing the inflow of leakage current in a word line and a bit line. CONSTITUTION: In a nonvolatile memory device, a plurality of mats read or write data and include a unit cell. A column switching unit(100) selects one bit line and controls the connection between the bit line and the global bit line. . A discharge unit discharges bit lines excluding a selected bit line. Discharge units(120,130,160) form a discharge path in an even bit line. Discharge units(140,150) form a discharge path in an odd bit line.
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