| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the property of the semiconductor device by increasing the contact area between an active region and a landing plug contact. CONSTITUTION: In a semiconductor device and a manufacturing method thereof, a mask pattern for opening an element isolation region is formed in a semiconductor substrate(100). The semiconductor substrate is etched by using a mask pattern to form an element isolation trench for defining an active region. An element isolation film(120) is formed by etching the semiconductor substrate until the mask pattern is exposed. A polysilicon layer is formed in the semiconductor substrate including the active area. CMP process is performed until the element isolation film is exposed to form a landing plug contact(155).
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